Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
Description
Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm−3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.
item.page.type
Text
patent
patent
item.page.format
application/pdf
Keywords
H01L31/073, H01L31/18