Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
Description
A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
item.page.type
Text
patent
patent
item.page.format
application/pdf
Keywords
438/485, 427/588, 427/593, 438/795