Sn whisker growth mitigation using NiO sublayers

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dc.contributorBorra, Vamsi (inventor)
dc.contributorGeorgiev, Daniel G. (inventor)
dc.contributorItapu, Srikanth (inventor)
dc.contributorThe University of Toledo (assignee)
dc.date2021-04-06
dc.date.accessioned2024-05-27T16:57:48Z
dc.date.available2024-05-27T16:57:48Z
dc.descriptionSemiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.
dc.formatapplication/pdf
dc.identifierutoledo:9799
dc.identifieriid:utpatents-US10967463
dc.identifierPatent No.: US10967463
dc.identifierAppl. No.: 16/381445
dc.identifier.urihttps://hdl.handle.net/20.500.14324/11418
dc.language.isoeng
dc.publisherUnited States Patent and Trademark Office
dc.rightsNo Copyright - United States
dc.subjectH05K3/16
dc.subjectH01L23/50
dc.subjectB23K1/00
dc.subjectB23K35/26
dc.subjectH05K1/09
dc.subjectB23K101/40
dc.subjectB23K101/42
dc.subjectB23K103/00
dc.subjectH05K3/14
dc.titleSn whisker growth mitigation using NiO sublayers
dc.typeText
dc.typepatent

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