Method of making diode structures
Date
Authors
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Publisher
United States Patent and Trademark Office
Abstract
Description
A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.
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Text
patent
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application/pdf
Keywords
257/530, 257/528, 257/E27.125, 257/E31.126