Back contact layer for photovoltaic cells

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dc.contributorThe University of Toledo
dc.contributorHeben, Michael J.
dc.contributorPhillips, Adam B.
dc.contributorKhanal, Rajendra R.
dc.contributorPlotnikov, Victor V.
dc.contributorCompaan, Alvin D.
dc.date2018-08-07
dc.date.accessioned2024-05-24T12:02:32Z
dc.date.available2024-05-24T12:02:32Z
dc.descriptionA photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
dc.formatapplication/pdf
dc.identifierutoledo:1209
dc.identifieriid:utpatents-US10043922
dc.identifierPatent No.: US10043922
dc.identifierAppl. No.: 14/421718
dc.identifier.urihttps://hdl.handle.net/20.500.14324/5104
dc.language.isoeng
dc.publisherUnited States Patent and Trademark Office
dc.rightsNo Copyright - United States
dc.subjectH01L31/0224
dc.subjectB82Y10/00
dc.subjectB82Y20/00
dc.subjectH01L31/02
dc.subjectH01L31/0216
dc.subjectH01L31/0725
dc.subjectH01L31/073
dc.subjectH01L31/075
dc.subjectH01L31/076
dc.subjectH01L31/077
dc.subjectH01L31/18
dc.titleBack contact layer for photovoltaic cells
dc.typeText
dc.typepatent

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