Nanoelectric memristor device with dilute magnetic semiconductors
| Title: | Nanoelectric memristor device with dilute magnetic semiconductors. |
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|---|---|---|
| Name(s): |
The University of Toledo, assignee Jha, Rashmi, inventor Ordosgoitti, Jorhan, inventor Long, Branden, inventor |
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| Type of Resource: | text | |
| Genre: | patent | |
| Publisher: | United States Patent and Trademark Office | |
| Other Date: | Date Filed: 2011-11-17 | |
| Date Issued: | 2013-08-06 | |
| Physical Form: | application/pdf | |
| Extent: | 12 p. | |
| Abstract/Description: | A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich/stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich/stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich/stochiometric metal oxide layer that is opposite from the oxygen-rich/stochiometric metal oxide layer. | |
| Identifier(s): |
utpatents-US8502343 (IID) Patent No.: US8502343 (patno) Appl. No.: 13/298601 (appno) |
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| Subject(s): |
257/537 257/536 257/E45.002 257/E45.003 |
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| Held by: | United States Patent and Trademark Office (USPTO) Public Search Facility | |
| Location: | University of Toledo Digital Repository | |
| Rights Statement: | No Copyright - United States | |
| In Collections: |