Method of making diode structures
Download pdf
Abstract/Description: | A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure. |
---|---|
Subject(s): | 257/530 257/528 257/E27.125 257/E31.126 |
Date Issued: | 2006-11-28 |
Title: | Method of making diode structures. |
|
---|---|---|
Name(s): |
The University of Toledo, assignee Compaan, Alvin D., inventor Gupta, Akhlesh, inventor |
|
Type of Resource: | text | |
Genre: | patent | |
Publisher: | United States Patent and Trademark Office | |
Other Date: | Date Filed: 2003-11-26 | |
Date Issued: | 2006-11-28 | |
Physical Form: | application/pdf | |
Extent: | 13 p. | |
Abstract/Description: | A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure. | |
Identifier(s): |
utpatents-US7141863 (IID) Patent No.: US7141863 (patno) Appl. No.: 10/722643 (appno) |
|
Subject(s): |
257/530 257/528 257/E27.125 257/E31.126 |
|
Held by: | United States Patent and Trademark Office (USPTO) Public Search Facility | |
Location: | University of Toledo Digital Repository | |
Rights Statement: | No Copyright - United States | |
In Collections: |