Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
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Abstract/Description: | A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate. |
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Subject(s): | 438/485 427/588 427/593 438/795 |
Date Issued: | 2003-10-28 |
Title: | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets. |
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Name(s): |
The University of Toledo, assignee Deng, Xunming, inventor Povolny, Henry S., inventor |
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Type of Resource: | text | |
Genre: | patent | |
Publisher: | United States Patent and Trademark Office | |
Other Date: | Date Filed: 2002-07-25 | |
Date Issued: | 2003-10-28 | |
Physical Form: | application/pdf | |
Extent: | 7 p. | |
Abstract/Description: | A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate. | |
Identifier(s): |
utpatents-US6638839 (IID) Patent No.: US6638839 (patno) Appl. No.: 10/205481 (appno) |
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Subject(s): |
438/485 427/588 427/593 438/795 |
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Held by: | United States Patent and Trademark Office (USPTO) Public Search Facility | |
Location: | University of Toledo Digital Repository | |
Rights Statement: | No Copyright - United States | |
In Collections: |