Hot-filament chemical vapor deposition chamber and process with multiple gas inlets

A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
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Abstract/Description: A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
Subject(s): 438/485
427/588
427/593
438/795
Date Issued: 2003-10-28
Title: Hot-filament chemical vapor deposition chamber and process with multiple gas inlets.
Name(s): The University of Toledo, assignee
Deng, Xunming, inventor
Povolny, Henry S., inventor
Type of Resource: text
Genre: patent
Publisher: United States Patent and Trademark Office
Other Date: Date Filed: 2002-07-25
Date Issued: 2003-10-28
Physical Form: application/pdf
Extent: 7 p.
Abstract/Description: A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
Identifier(s): utpatents-US6638839 (IID)
Patent No.: US6638839 (patno)
Appl. No.: 10/205481 (appno)
Subject(s): 438/485
427/588
427/593
438/795
Held by: United States Patent and Trademark Office (USPTO) Public Search Facility
Location: University of Toledo Digital Repository
Rights Statement: No Copyright - United States
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