Open flow helium cryostat system and related method of using
Download pdf
Abstract/Description: | An open flow helium cryostat system for cooling a sample crystal to be examined using X-ray diffraction, neutron diffraction, or a similar method. The cryostat system including a primary helium supply to provide a first stream of liquid helium onto the sample crystal and a secondary helium supply to provide a second stream of gaseous helium around at least a portion of the primary helium supply at a temperature warmer than the first stream of liquid helium to prevent the formation of ice on the sample crystal. |
---|---|
Subject(s): | 62/51.1 62/293 62/320 |
Date Issued: | 1999-12-21 |
Title: | Open flow helium cryostat system and related method of using. |
|
---|---|---|
Name(s): |
The University of Toledo, assignee Pinkerton, Alan A., inventor Martin, Anthony, inventor Kirschbaum, Kristin, inventor |
|
Type of Resource: | text | |
Genre: | patent | |
Publisher: | United States Patent and Trademark Office | |
Other Date: | Date Filed: 1998-04-15 | |
Date Issued: | 1999-12-21 | |
Physical Form: | application/pdf | |
Extent: | 11 p. | |
Abstract/Description: | An open flow helium cryostat system for cooling a sample crystal to be examined using X-ray diffraction, neutron diffraction, or a similar method. The cryostat system including a primary helium supply to provide a first stream of liquid helium onto the sample crystal and a secondary helium supply to provide a second stream of gaseous helium around at least a portion of the primary helium supply at a temperature warmer than the first stream of liquid helium to prevent the formation of ice on the sample crystal. | |
Identifier(s): |
utpatents-US6003321 (IID) Patent No.: US6003321 (patno) Appl. No.: 09/060475 (appno) |
|
Subject(s): |
62/51.1 62/293 62/320 |
|
Held by: | United States Patent and Trademark Office (USPTO) Public Search Facility | |
Location: | University of Toledo Digital Repository | |
Rights Statement: | No Copyright - United States | |
In Collections: |