Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells

Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm−3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.
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Abstract/Description: Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm−3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.
Subject(s): H01L31/073
H01L31/18
Date Issued: 2022-02-22
Title: Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells.
Name(s): Yan, Feng, inventor
Yan, Yanfa, inventor
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA, assignee
The University of Toledo, assignee
Type of Resource: text
Genre: patent
Date Issued: 2022-02-22
Other Date: Date Filed: 2021-03-03
Publisher: United States Patent and Trademark Office
Physical Form: application/pdf
Extent: 18 p.
Abstract/Description: Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm−3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.
Identifier(s): utpatents-US11257977 (IID)
Patent No.: US11257977 (patno)
Appl. No.: 17/190664 (appno)
Subject(s): H01L31/073
H01L31/18
Held by: United States Patent and Trademark Office (USPTO) Public Search Facility
Location: University of Toledo Digital Repository
Rights Statement: No Copyright - United States
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