Sn whisker growth mitigation using NiO sublayers

Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.
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Abstract/Description: Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.
Subject(s): H05K3/16
H01L23/50
B23K1/00
B23K35/26
H05K1/09
B23K101/40
B23K101/42
B23K103/00
H05K3/14
Date Issued: 2021-04-06
Title: Sn whisker growth mitigation using NiO sublayers.
Name(s): Borra, Vamsi, inventor
Georgiev, Daniel G., inventor
Itapu, Srikanth, inventor
The University of Toledo, assignee
Type of Resource: text
Genre: patent
Date Issued: 2021-04-06
Other Date: Date Filed: 2019-04-11
Publisher: United States Patent and Trademark Office
Physical Form: application/pdf
Extent: 26 p.
Abstract/Description: Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.
Identifier(s): utpatents-US10967463 (IID)
Patent No.: US10967463 (patno)
Appl. No.: 16/381445 (appno)
Subject(s): H05K3/16
H01L23/50
B23K1/00
B23K35/26
H05K1/09
B23K101/40
B23K101/42
B23K103/00
H05K3/14
Held by: United States Patent and Trademark Office (USPTO) Public Search Facility
Location: University of Toledo Digital Repository
Rights Statement: No Copyright - United States
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