Iron pyrite nanocrystal film as a copper-free back contact for polycrystalline CdTe thin film solar cells
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Abstract/Description: | The invention discloses nanocrystalline (NC) FeS2 thin films as the back contact for CdTe solar cells. In one example, the FeS2 NC layer is prepared from a solution directly on the CdTe surface using spin-casting and chemical treatment at ambient temperature and pressure, without a thermal treatment step. Solar cells prepared by applying the NC FeS2 back contact onto CdTe yield efficiencies of about 95% to 100% that of standard Cu/Au back contact devices. In another example, FeS2 is interposed between Cu and Au to form a Cu/FeS2 NC/Au back contact configuration yielding an efficiency improvement of 5 to 9 percent higher than standard Cu/Au devices. |
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Subject(s): | H01L31/0296 H01L31/02 H01L31/032 H01L31/0392 H01L31/073 H01L31/0224 |
Date Issued: | 2019-07-16 |
Title: | Iron pyrite nanocrystal film as a copper-free back contact for polycrystalline CdTe thin film solar cells. |
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Name(s): |
Bhandari, Khagendra, inventor Ellingson, Randy J., inventor Khanal, Rajendra R., inventor The University of Toledo, assignee |
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Type of Resource: | text | |
Genre: | patent | |
Date Issued: | 2019-07-16 | |
Other Date: | Date Filed: 2015-02-10 | |
Publisher: | United States Patent and Trademark Office | |
Physical Form: | application/pdf | |
Extent: | 26 | |
Abstract/Description: | The invention discloses nanocrystalline (NC) FeS2 thin films as the back contact for CdTe solar cells. In one example, the FeS2 NC layer is prepared from a solution directly on the CdTe surface using spin-casting and chemical treatment at ambient temperature and pressure, without a thermal treatment step. Solar cells prepared by applying the NC FeS2 back contact onto CdTe yield efficiencies of about 95% to 100% that of standard Cu/Au back contact devices. In another example, FeS2 is interposed between Cu and Au to form a Cu/FeS2 NC/Au back contact configuration yielding an efficiency improvement of 5 to 9 percent higher than standard Cu/Au devices. | |
Identifier(s): |
utpatents-US10355148 (IID) Patent No.: US10355148 (patno) Appl. No.: 15/116629 (appno) |
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Subject(s): |
H01L31/0296 H01L31/02 H01L31/032 H01L31/0392 H01L31/073 H01L31/0224 |
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Held by: | United States Patent and Trademark Office (USPTO) Public Search Facility | |
Location: | University of Toledo Digital Repository | |
Rights Statement: | No Copyright - United States | |
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