Back contact layer for photovoltaic cells

A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
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Abstract/Description: A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
Subject(s): H01L31/0224
B82Y10/00
B82Y20/00
H01L31/02
H01L31/0216
H01L31/0725
H01L31/073
H01L31/075
H01L31/076
H01L31/077
H01L31/18
Date Issued: 2018-08-07