Document Type

Patent

Abstract

A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

Patent Country

US

Patent Number

US7141863

Publication Date

11-28-2006

Assignee(s)

The University of Toledo

Application Number

10/722643

Filing Date

November 2003

Primary Class

257/530

Secondary Class

257/528; 257/E27.125; 257/E31.126

Rights

These materials are free of copyright restrictions and are in the public domain within the United States only. The USPTO reserves the right to assert copyright protection internationally.

Institution

The University of Toledo

Repository

University of Toledo Libraries

Digital Publisher

Digital Initiatives

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