Document Type

Patent

Abstract

A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich/stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich/stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich/stochiometric metal oxide layer that is opposite from the oxygen-rich/stochiometric metal oxide layer.

Patent Country

US

Patent Number

US8502343

Publication Date

8-6-2013

Assignee(s)

The University of Toledo

Application Number

13/298601

Filing Date

November 2011

Primary Class

257/537

Secondary Class

257/536; 257/E45.002; 257/E45.003

Rights

These materials are free of copyright restrictions and are in the public domain within the United States only. The USPTO reserves the right to assert copyright protection internationally.

Institution

The University of Toledo

Repository

University of Toledo Libraries

Digital Publisher

Digital Initiatives

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