Abstract

A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich/stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich/stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich/stochiometric metal oxide layer that is opposite from the oxygen-rich/stochiometric metal oxide layer.

Document Type

Patent

Primary Class

257/537

Secondary Class

257/536; 257/E45.002; 257/E45.003

Application Number

13/298601

Filing Date

November 2011

Patent Number

US8502343

Assignee(s)

The University of Toledo

Publication Date

8-6-2013

Patent Country

US

Language

en_US

Institution

The University of Toledo

Repository

University of Toledo Libraries

Digital Publisher

Digital Initiatives

Rights

These materials are free of copyright restrictions and are in the public domain within the United States only. The USPTO reserves the right to assert copyright protection internationally.

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Rights Statement

Rights Statement

No Copyright - United States. URI: http://rightsstatements.org/vocab/NoC-US/1.0/
The organization that has made the Item available believes that the Item is in the Public Domain under the laws of the United States, but a determination was not made as to its copyright status under the copyright laws of other countries. The Item may not be in the Public Domain under the laws of other countries. Please refer to the organization that has made the Item available for more information.