Document Type

Patent

Abstract

A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.

Patent Country

US

Patent Number

US6755151

Publication Date

6-29-2004

Assignee(s)

The University of Toledo

Application Number

10/616873

Filing Date

July 2003

Primary Class

118/723HC

Secondary Class

118/723E; 118/733

Rights

These materials are free of copyright restrictions and are in the public domain within the United States only. The USPTO reserves the right to assert copyright protection internationally.

Institution

The University of Toledo

Repository

University of Toledo Libraries

Digital Publisher

Digital Initiatives

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