A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.
University of Maine
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The University of Toledo
University of Toledo Libraries
Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; and Makhratchev, Konstantin, "Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen" (2005). University of Toledo U.S. Patents. 100.